Author Affiliations
Abstract
1 School of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian 116024, China
2 Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361102, China
3 Institute of Laser Engineering, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing 100124, China
High-resolution multi-color printing relies upon pixelated optical nanostructures, which is crucial to promote color display by producing nonbleaching colors, yet requires simplicity in fabrication and dynamic switching. Antimony trisulfide (Sb2S3) is a newly rising chalcogenide material that possesses prompt and significant transition of its optical characteristics in the visible region between amorphous and crystalline phases, which holds the key to color-varying devices. Herein, we proposed a dynamically switchable color printing method using Sb2S3-based stepwise pixelated Fabry-Pérot (FP) cavities with various cavity lengths. The device was fabricated by employing a direct laser patterning that is a less time-consuming, more approachable, and low-cost technique. As switching the state of Sb2S3 between amorphous and crystalline, the multi-color of stepwise pixelated FP cavities can be actively changed. The color variation is due to the profound change in the refractive index of Sb2S3 over the visible spectrum during its phase transition. Moreover, we directly fabricated sub-50 nm nano-grating on ultrathin Sb2S3 laminate via microsphere 800-nm femtosecond laser irradiation in far field. The minimum feature size can be further decreased down to ~45 nm (λ/17) by varying the thickness of Sb2S3 film. Ultrafast switchable Sb2S3 photonic devices can take one step toward the next generation of inkless erasable papers or displays and enable information encryption, camouflaging surfaces, anticounterfeiting, etc. Importantly, our work explores the prospects of rapid and rewritable fabrication of periodic structures with nano-scale resolution and can serve as a guideline for further development of chalcogenide-based photonics components.
tunable color displays Fabry-Pérot cavity resonators color printing chalcogenide materials 
Opto-Electronic Advances
2024, 7(1): 230033
季凌飞 1,2,3,*孙伟高 1,2,3林真源 1,2,3周博昊 1,2,3[ ... ]王冠强 1,2,3
作者单位
摘要
1 北京工业大学材料与制造学部激光工程研究院,北京 100124
2 北京工业大学跨尺度激光成型制造技术教育部重点实验室,北京 100124
3 北京市激光应用技术工程技术研究中心,北京 100124
随着智能化时代的到来,柔性电子由于其极强的共形能力和优异的器件性能,在进一步推动现代化产业发展中取得越来越重要的地位。超快激光技术以其优异的高精制造能力在柔性电子高分辨无损制备上展示出独特的优势和应用前景。本文从超快激光与物质相互作用基本机制入手,着重介绍了当前超快激光在柔性电子领域的四种典型特征功用及其研究现状,并据此总结该领域超快激光应用所面临的挑战和未来发展趋势。
超快激光 柔性电子 微纳加工 
激光与光电子学进展
2024, 61(1): 0114005
Author Affiliations
Abstract
1 Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University , Xiamen 361102, China
2 School of Optoelectronic Engineering and Instrumentation Science, Dalian University of Technology, Dalian 116024, China
3 Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576, Singapore
Creation of arbitrary features with high resolution is critically important in the fabrication of nano-optoelectronic devices. Here, sub-50 nm surface structuring is achieved directly on Sb2S3 thin films via microsphere femtosecond laser irradiation in far field. By varying laser fluence and scanning speed, nano-feature sizes can be flexibly tuned. Such small patterns are attributed to the co-effect of microsphere focusing, two-photons absorption, top threshold effect, and high-repetition-rate femtosecond laser-induced incubation effect. The minimum feature size can be reduced down to ~30 nm (λ/26) by manipulating film thickness. The fitting analysis between the ablation width and depth predicts that the feature size can be down to ~15 nm at the film thickness of ~10 nm. A nano-grating is fabricated, which demonstrates desirable beam diffraction performance. This nano-scale resolution would be highly attractive for next-generation laser nano-lithography in far field and in ambient air.
non-linear effect microsphere femtosecond laser far field 
Opto-Electronic Advances
2023, 6(6): 230029
Author Affiliations
Abstract
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576
As a noncontact strategy with flexible tools and high efficiency, laser precision engineering is a significant advanced processing way for high-quality micro-/nanostructure fabrication, especially to achieve novel functional photoelectric structures and devices. For the microscale creation, several femtosecond laser fabrication methods, including multiphoton absorption, laser-induced plasma-assisted ablation, and incubation effect have been developed. Meanwhile, the femtosecond laser can be combined with microlens arrays and interference lithography techniques to achieve the structures in submicron scales. Down to nanoscale feature sizes, advanced processing strategies, such as near-field scanning optical microscope, atomic force microscope, and microsphere, are applied in femtosecond laser processing and the minimum nanostructure creation has been pushed down to ~25 nm due to near-field effect. The most fascinating femtosecond laser precision engineering is the possibility of large-area, high-throughput, and far-field nanofabrication. In combination with special strategies, including dual femtosecond laser beam irradiation, ~15 nm nanostructuring can be achieved directly on silicon surfaces in far field and in ambient air. The challenges and perspectives in the femtosecond laser precision engineering are also discussed.
Ultrafast Science
2021, 1(1): 9783514
孙正阳 1,2季凌飞 1,2,*林真源 1,2张彤 1,2[ ... ]张犁天 1,2
作者单位
摘要
1 北京工业大学材料与制造学部激光工程研究院, 北京 100124
2 跨尺度激光成型制造技术教育部重点实验室, 北京 100124
采用KrF准分子激光辐照4H-SiC制备石墨烯层,从4H-SiC晶面取向对石墨烯生长质量影响的角度开展研究工作,分析激光能量密度、脉冲数及晶面取向对石墨烯质量的影响。当激光能量密度为1.06 J/cm 2,脉冲数为8000时,4H-SiC样品极性Si(0001)面和非极性a(11?20)面上生长的石墨烯质量均达到最好。石墨烯与4H-SiC衬底极性Si(0001)面之间存在缓冲层,为石墨烯的生长提供了模板,得到的石墨烯更为有序,缺陷态更少;而非极性a(11?20)面上生成的石墨烯与衬底之间未生成缓冲层,生长的石墨烯层较为无序,对激光参数的变化更为敏感。
材料 石墨烯 激光辐照 晶面指数 
中国激光
2020, 47(8): 0802002
Author Affiliations
Abstract
1 Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
2 Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
3 e-mail: ncltji@bjut.edu.cn
This paper reports the physical phenomenon of the temporal overlapping double femtosecond laser-induced ablation enhancement at different time delays. Detailed thermodynamic modeling demonstrates the ablation enhancement is highly dependent on the first pulse’s laser fluence. In the case of the first pulse laser fluence being higher than material’s ablation threshold, the ablation enhancement is attributed to optical absorption modification by the first pulse ablation. While the first pulse’s laser fluence is lower than the material’s ablation threshold, the first pulse-induced melting leads to much higher absorption of the second pulse. However, for the case of the first pulse’s laser fluence even lower than melting threshold, the ablation enhancement decreases obviously with time delay. The results of the temporal overlapping double femtosecond laser ablation of poly(ε-caprolactone) are in good agreement with the theoretical predictions.
Photonics Research
2020, 8(3): 03000271
作者单位
摘要
北京工业大学激光工程研究院, 北京 100124
通过激光辐照固态Al膜,制备了一种p型重掺杂4H-SiC,分析了Al膜厚度、激光脉冲个数对掺杂结果的影响,验证了不同工艺参数对p型掺杂层表面电学性能的调控作用。结果表明,当Al膜厚度为120 nm,脉冲个数为50时,掺杂试样的最大载流子浓度为6.613×10 17 cm -3,最小体电阻率为17.36 Ω·cm,掺杂浓度(粒子数浓度)可达6.6×10 19 cm -3。4H-SiC的Al掺杂改性机理为:在紫外激光作用下,Si—C键断裂,Al原子替代Si原子形成p型掺杂层。
薄膜 半绝缘4H-SiC Al掺杂 准分子激光 
中国激光
2018, 45(6): 0603003
作者单位
摘要
1 Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
2 China Building Materials Academy, Beijing 100024, China
picosecond laser As2Se3chalcogenide glass surface micro-structure antireflection contact angle 
光电工程
2017, 44(12): 1247
作者单位
摘要
1 北京工业大学激光工程研究院,北京 100124
2 中国建筑材料科学研究总院,北京 100024
采用紫外皮秒激光在As2Se3玻璃表面以线扫描形式快速制备大面积周期性点阵式增透微结构,获得了红外透光性能提高的硫系玻璃样品。研究确定了As2Se3玻璃的激光刻蚀阈值,并研究设计了合适线扫描工艺方法。所制样品相对于原样在波长11.0 μm~12.4 μm范围内,透过率平均提高10.0 %;波长13.0 μm~14.2 μm范围内,透过率平均提高5.2 %。激光扫描制备方法没有破坏样品表面原有的浸润性,整个制备过程均在空气开放环境下进行,成本低,工艺可控性强,效率高,制备8 mm×8 mm的表面微结构,仅用时3.65 s,且表面微结构单元尺寸及间距可按材料应用需求调控。分析表明,当激光能量较低时,对该硫系玻璃的去除以“冷加工”为主,不会有明显的热效应,得到微结构的硫系玻璃表面元素组成未发生改变;激光能量较高时,会存在一定的热效应,使得刻蚀点出现熔融态,在微坑边缘出现凸起或翻边。
皮秒激光 As2Se3硫系玻璃 表面微结构 增透 接触角 picosecond laser As2Se3chalcogenide glass surface micro-structure antireflection contact angle 
光电工程
2017, 44(12): 1200
作者单位
摘要
Institute of Laser Technology, Beijing University of Technology, Beijing 100124, China
ultrafast laser filamentation transparent material laser material processing 
光电工程
2017, 44(9): 940

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!